Scaling behavior of ferroelectric FET with reduction in number of domains in ferroelectric layer

Abstract With the gate-length scaling, number of domains in FeFET is reduced to a few or single domain. In this paper, we investigate effect multi-domains versus few/single-domain behavior FeFET. The abrupt polarization switching single-domain obtained by modifying Preisach model which difference between saturation and remnant ( P s − r ) reduced. We show that for same program/erase voltage, two-times higher memory window can be achieved with single/few-domains than multi-domain Further, at fixed scaling shows improved variability due increased polarization-induced vertical field present an optimized device having low operating voltage ±2.4 V but performance ±5 V, highly promising power applications.